CTH6106PS-T52

CTH6106PS-T52 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -60 V  Drain-Source On-Resistance RDS(ON) 14m, at VGS= -10V, IDS= -17A RDS(ON) 16m, at VGS= -4.5V, IDS= -14A  Continuous Drain Current at TC=25℃ ID = -61A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Load Switch  Power Management  LCD Display inverter  DC/DC Converter Description The CTH6106PS-T52 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTH6106PS-T52 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25OC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @ TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @ TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Ratings -60 ±20 -61 -240 114 -55 to 150 -55 to 150 Units V V A A W 0C 0C Notes 1 1 2 Min Typ Max Units Notes - - 1.1 C0/W 1,2 CT Micro Proprietary & Confidential Page 2 Rev 2 Jun, 2015 CTH6106PS-T52 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteristics Symbol...