CTL0015PS-R3 P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -50 V Drain-Source On-Resist...
CTL0015PS-R3 P-Channel Enhancement
MOSFET
Features
Drain-Source Breakdown
Voltage VDSS -50 V Drain-Source On-Resistance
RDS(ON) 5, at VGS= -5.0V, ID= -0.1A
Continuous Drain Current at TC=25℃ID = -0.13A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL0015PS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
Applications
DC to DC Converter Load switching Battery
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 1 Nov, 2013
CTL0015PS-R3 P-Channel Enhancement
MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source
Voltage
VGS Gate-Source
Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance Junction-Ambient (t=10s)
Test Conditions
Test Conditions -50 ±20 -0.13 -0.52 0.225
-55 to 150 -55 to 150
Min Notes V V A1 A1 W2 °C °C
Min Typ Max Units Notes -- 175 -- oC /W 1,4
CT Micro Proprietary & Confidential
Page 2
Rev 1 Nov, 2013
CTL0015PS-R3 P-Channel Enhancement
MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
BVDSS Drain-Source Breakdown
Voltage
IDSS Drain-...