CTL015NS10-R3 N-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS 105 V Drain-Source On-Resistance
RDS(ON) 230mΩ, at VGS= 10V, ID= 1.5A RDS(ON) 275mΩ, at VGS= 4.5V, ID= 1.0A
℃ Continuous Drain Current at TA=25 ID =1.5A
Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Description
The CTL015NS10-R3 is...
