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CTL0212PS-R3 MOSFET Datasheet PDF

P-Channel MOSFET

P-Channel MOSFET

 

 

 

Part Number CTL0212PS-R3
Description P-Channel MOSFET
Feature CTL0212PS-R3 P-Channel Enhancement MOSFE T Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On- Resistance RDS(ON) 130m, at VGS= -4.
5V, ID= -1.
0A RDS(ON) 140m, at VGS= -2.
5V, ID= -0.
5A  Continuous Drain C urrent at TC=25℃ID = -2.
1A  Advanc ed high cell density Trench Technology  RoHS Compliance & Halogen Free Appl ications  Power Management  Lithi um Ion Battery Description The CTL0212 PS-R3 is the P-Channel logic enhancemen t mode power field effect transistors a re produced using high cell density, DM OS trench technology.
This high density process is especially tailored to .
Manufacture CT Micro
Datasheet
Download CTL0212PS-R3 Datasheet

CTL0212PS-R3

 

 

 


 

 

 

Part Number CTL0212PS-R3
Description P-Channel MOSFET
Feature CTL0212PS-R3 P-Channel Enhancement MOSFE T Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On- Resistance RDS(ON) 130m, at VGS= -4.
5V, ID= -1.
0A RDS(ON) 140m, at VGS= -2.
5V, ID= -0.
5A  Continuous Drain C urrent at TC=25℃ID = -2.
1A  Advanc ed high cell density Trench Technology  RoHS Compliance & Halogen Free Appl ications  Power Management  Lithi um Ion Battery Description The CTL0212 PS-R3 is the P-Channel logic enhancemen t mode power field effect transistors a re produced using high cell density, DM OS trench technology.
This high density process is especially tailored to .
Manufacture CT Micro
Datasheet
Download CTL0212PS-R3 Datasheet

CTL0212PS-R3

 

 

 

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