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CTL0262PS-R3

CT Micro

P-Channel MOSFET

Description
CTL0262PS-R3 P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS -20 V  Drain-Source On-Resistance RDS(ON) 76m, at VGS= -4.5V, ID= -3.4A RDS(ON) 97m, at VGS= -2.5V, ID= -2.4A RDS(ON) 140m, at VGS= -1.8V, ID= -1.7A  Continuous Drain Current at TC=25℃ID = -3.4A  Advanced high cell density Trench Technology  RoHS Compliance & Hal...


CT Micro

CTL0262PS-R3

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