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CTL0322PS-R3 Datasheet

Part Number CTL0322PS-R3
Manufacturers CT Micro
Logo CT Micro
Description P-Channel MOSFET
Datasheet CTL0322PS-R3 DatasheetCTL0322PS-R3 Datasheet (PDF)

CTL0322PS-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS -20 V • Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A ℃• Continuous Drain Current at TA=25 ID = -3.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell.

  CTL0322PS-R3   CTL0322PS-R3






P-Channel MOSFET

CTL0322PS-R3 P-Channel Enhancement MOSFET Features • Drain-Source Breakdown Voltage VDSS -20 V • Drain-Source On-Resistance RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A ℃• Continuous Drain Current at TA=25 ID = -3.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Description The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications • Power Management • Lithium Ion Battery • High-Side Switching Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 3 Jun, 2015 CTL0322PS-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions -20 ±12 -3.2 -10 1.4 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 65 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 3 Jun, 2015 CTL0322PS-R3 P-Channel Enhancement MOSFET Electrical.


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