CTL0322PS-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -20 V • Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A
℃• Continuous Drain Current at TA=25 ID = -3.2A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell.
P-Channel MOSFET
CTL0322PS-R3 P-Channel Enhancement MOSFET
Features
• Drain-Source Breakdown Voltage VDSS -20 V • Drain-Source On-Resistance
RDS(ON) 55mΩ, at VGS= -4.5V, ID= -3.2A RDS(ON) 70mΩ, at VGS= -2.5V, ID= -2.4A RDS(ON) 100mΩ, at VGS= -1.8V, ID= -1.7A
℃• Continuous Drain Current at TA=25 ID = -3.2A
• Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free
Description
The CTL0322PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Applications
• Power Management • Lithium Ion Battery • High-Side Switching
Package Outline
Schematic
Drain
Drain
Gate
Source
Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 3 Jun, 2015
CTL0322PS-R3 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
℃ID Continuous Drain Current @TA=25
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance Junction-Ambient (t=10s)
Test Conditions
Test Conditions -20 ±12 -3.2 -10 1.4
-55 to 150 -55 to 150
Min Notes V V A1 A1 W2 °C °C
Min Typ Max Units Notes -- 65 -- oC /W 1,4
CT Micro Proprietary & Confidential
Page 2
Rev 3 Jun, 2015
CTL0322PS-R3 P-Channel Enhancement MOSFET
Electrical.