CTL0382PS

CTL0382PS P-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS - 20 V  Drain-Source On-Resistance RDS(ON) 42m, at VGS= - 4.5V, IDS= - 3.8A RDS(ON) 57m, at VGS= - 2.5V, IDS= - 3.0A  Continuous Drain Current at TC=25℃ ID = - 3.8A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Applications  Power Management  Lithium Ion Battery Description The CTL0382PS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Pin 2 GATE Drain Pin 1 Pin 3 Source Gate: Drain: Source: Pin 1 Pin2 Pin3 CT Micro Proprietary & Confidential Page 1 Rev 1 May, 2013 CTL0382PS P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current PD Total Power Dissipation TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -20 ±12 -3.8 -15 1.25 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 200 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 May, 2013 CTL0382PS P-Channel Enhancement MOSFET Electrical Characteristics Tc = 25°C (unless otherwise specified) Static Characteristics Sy...