CTL0404NS-R3

CTL0404NS-R3 N-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS 40 V Drain-Source On-Resistance RDS(ON) 32mΩ, at VGS= 10V, ID= 4.0A RDS(ON) 50mΩ, at VGS= 4.5V, ID= 3.0A ℃ Continuous Drain Current at TA=25 ID =4.0A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CTL0404NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Applications Power Management Portable Equipment DC/DC Converter Load Switch Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTL0404NS-R3 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA4 Thermal Resistance Junction-Ambient (t=10s) Test Conditions Test Conditions 40 ±20 4 16 1.4 -55 to 150 -55 to 150 Min Notes V V A1 A1 W2 °C °C Min Typ Max Units Notes -- 120 -- oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 Jun, 2015 CTL0404NS-R3 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless ot...