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CTL0412ND
N-Channel MOSFET
Description
CTL0412ND N-Channel Enhancement
MOSFET
Features Drain-Source Breakdown
Voltage
VDSS 20 V Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, ID= 4.1A RDS(ON) 27m, at VGS= 2.5V, ID= 3.8A Continuous Drain Current at TC=25℃ID = 4.1A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Description The CTL0412ND uses high pe...
CT Micro
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