CTL0422PS-R3 P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V Drain-Source On-Resistance
RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A
Continuous Drain Current at TC=25℃ID = -4.0A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Power Management Lithium Ion Battery
Description
The CTL0422PS-R3 is the P-Channel logic enhancement mode power f.
P-Channel MOSFET
CTL0422PS-R3 P-Channel Enhancement MOSFET
Features
Drain-Source Breakdown Voltage VDSS -20 V Drain-Source On-Resistance
RDS(ON) 45m, at VGS= -4.5V, ID= -4.0A RDS(ON) 52m, at VGS= -2.5V, ID= -3.0A RDS(ON) 60m, at VGS= -1.8V, ID= -2.0A
Continuous Drain Current at TC=25℃ID = -4.0A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free
Applications
Power Management Lithium Ion Battery
Description
The CTL0422PS-R3 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package.
Package Outline
Schematic
Drain
Gate
Source
Drain Gate
Source
CT Micro Proprietary & Confidential
Page 1
Rev 1 Nov, 2013
CTL0422PS-R3 P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
Parameters
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM Pulsed Drain Current
PD Total Power Dissipation
TSTG
Storage Temperature Range
TJ Operating Junction Temperature Range
Thermal Characteristics
Symbol
Parameters
RӨJA4
Thermal Resistance Junction-Ambient (t=10s)
Test Conditions
Test Cond.