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CTL0452NS
N-Channel MOSFET
Description
CTL0452NS N-Channel Enhancement
MOSFET
Features Drain-Source Breakdown
Voltage
VDSS 20 V Drain-Source On-Resistance RDS(ON) 22m, at VGS= 4.5V, IDS= 4.5A RDS(ON) 27m, at VGS= 2.5V, IDS= 4.0A Continuous Drain Current at TC=25℃ ID = 4.5A Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Applications Power Management Li...
CT Micro
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