DatasheetsPDF.com

CTL550NS08-T52 Datasheet

Part Number CTL550NS08-T52
Manufacturers CT Micro
Logo CT Micro
Description N-Channel MOSFET
Datasheet CTL550NS08-T52 DatasheetCTL550NS08-T52 Datasheet (PDF)

CTL550NS08-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 80V  Drain-Source On-Resistance RDS(ON) 11m, at VGS= 10V, ID= 40A  Continuous Drain Current at TC=25℃ID =55A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL550NS08-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to.

  CTL550NS08-T52   CTL550NS08-T52






N-Channel MOSFET

CTL550NS08-T52 N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 80V  Drain-Source On-Resistance RDS(ON) 11m, at VGS= 10V, ID= 40A  Continuous Drain Current at TC=25℃ID =55A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL550NS08-T52 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application. Applications  DC/DC Converter  Load Switch  Power Management Package Outline Schematic Drain Gate Source Drain Gate Source CT Micro Proprietary & Confidential Page 1 Rev 2 Jun, 2015 CTL550NS08-T52 N-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current @TC=25℃ IDM Pulsed Drain Current PD Total Power Dissipation @TC=25℃ TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJC Thermal Resistance Junction-Case Test Conditions Test Conditions 80 ±20 55 220 62.5 -55 to 150 -55 to 150 Min Note Vs V A1 A1 W2 °C °C Min Typ Max Units Notes -- -- 2 oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 2 Jun, 2015 CTL550NS08-T52 N-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unle.


2020-05-20 : 4N29    CT3043-5L    CT3042-5L    CT3041-5L    MIC4576    IRP3012V24-E5    IR300N-D0    PDP92406BT14    CT415    CTL0452NS   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)