CTLM13PS05-R3

CTLM13PS05-R3 P-Channel Enhancement MOSFET Features Drain-Source Breakdown Voltage VDSS - 50 V Drain-Source On-Resistance RDS(ON) 5Ω, at VGS= - 5.0V, IDS= - 100mA ℃ Continuous Drain Current at TA=25 ID = -130mA Advanced high cell density Trench Technology RoHS Compliance & Halogen Free Applications Power Management Portable Equipment Battery Powered System DC/DC Converter Load Switch Description The CTLM13PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Package Outline Schematic Drain Drain Gate Source Gate Source CT Micro Proprietary & Confidential Page 1 Rev 1 Jun, 2015 CTLM13PS05-R3 P-Channel Enhancement MOSFET Absolute Maximum Rating at 25oC Symbol Parameters VDS Drain-Source Voltage VGS Gate-Source Voltage ℃ID Continuous Drain Current @TA=25 IDM Pulsed Drain Current ℃PD Total Power Dissipation @TA=25 TSTG Storage Temperature Range TJ Operating Junction Temperature Range Thermal Characteristics Symbol Parameters RӨJA Thermal Resistance Junction-Ambient (t=10s) Test Conditions Ratings -50 ±20 -0.13 -0.52 0.225 -55 to 150 -55 to 150 Units V V A A W oC oC Notes 1 1 2 Min Typ Max Units Notes - 555 - oC /W 1,4 CT Micro Proprietary & Confidential Page 2 Rev 1 Jun, 2015 CTLM13PS05-R3 P-Channel Enhancement MOSFET Electrical Characteristics TA = 25°C (unless otherwise specified) Static Characteris...