Schottky Barrier Diode Silicon Epitaxial
CUHS20F40
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CUHS20F40
1: Cathode 2: Anode
US2H
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Reverse voltage
VR 40 V
Average rectified current
IO (Note 1)
2.0
A
Non-repetitive peak forward surge current
IFSM (Note 2)
10
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note.