Schottky Barrier Diode Silicon Epitaxial
CUHS20S40
1. Applications
• High-Speed Switching
2. Packaging and Internal Circ...
Schottky Barrier Diode Silicon Epitaxial
CUHS20S40
1. Applications
High-Speed Switching
2. Packaging and Internal Circuit
CUHS20S40
1: Cathode 2: Anode
US2H
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Reverse
voltage
VR 40 V
Average rectified current
IO (Note 1)
2
A
Non-repetitive peak forward surge current
IFSM (Note 2)
10
A
Junction temperature
Tj 150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2)
Note 2: Pulse width 10 ms
©2018-2019 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2019-04
2019-04-16 Rev.2.0
4. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics Forward
voltage
Reverse current Total capacitance Note 1: Pulse measurement.
Symbol Note
...