CUHS20S40

Schottky Barrier Diode Silicon Epitaxial CUHS20S40 1. Applications High-Speed Switching 2. Packaging and Internal Circuit CUHS20S40 1: Cathode 2: Anode US2H 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 40 V Average rectified current IO (Note 1) 2 A Non-repetitive peak forward surge current IFSM (Note 2) 10 A Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note 2: Pulse width 10 ms ©2018-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-04 2019-04-16 Rev.2.0 4. Electrical Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Forward voltage Reverse current Total capacitance Note 1: Pulse measurement. Symbol Note ...