| Part Number | CXK77B1810AGB |
| Manufacturer | Sony Corporation |
| Title | High Speed Bi-CMOS Synchronous Static RAM |
| Description | The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input regist... |
| Features |
the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.15V • Byte-write possible • OE asynchronization • ... |
| Datasheet | CXK77B1810AGB pdf datasheet |
| Part Number | CXK77B1810AGB-6 |
| Manufacturer | Sony Corporation |
| Title | High Speed Bi-CMOS Synchronous Static RAM |
| Description | The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input regist. |
| Features |
the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.15V • Byte-write possible • OE asynchronization • . |
| Datasheet | CXK77B1810AGB-6 pdf datasheet |
| Part Number | CXK77B1810AGB-5 |
| Manufacturer | Sony Corporation |
| Title | High Speed Bi-CMOS Synchronous Static RAM |
| Description | The CXK77B1810AGB-5/6 is a high speed 1M bit Bi-CMOS synchronous static RAM organized as 65536 words by 18 bits. This SRAM integrates input regist. |
| Features |
the delayed write system to reduce the dead cycles. Features • Fast cycle time (Cycle) (Frequency) CXK77B1810AGB-5 5ns 200MHz -6 6ns 167MHz • Inputs and outputs are GTL/HSTL compatible • Controlled Impedance Driver • Single 3.3V power supply: 3.3V±0.15V • Byte-write possible • OE asynchronization • . |
| Datasheet | CXK77B1810AGB-5 pdf datasheet |
Since 2024. D4U Semiconductor.
|
Contact Us
|
Privacy Policy