CXT3019

CXT3019 SURFACE MOUNT NPN SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications. SOT-89 CASE MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM PD TJ,Tstg ΘJA 140 80 7.0 1.0 1.5 1.2 -65 to +150 104 UNITS V V V A A W °C °C/W ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=90V VEB=5.0V IC=100µA IC=30mA IE=100µA IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA VCE=10V, IC=0.1mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA VCE=10V, IC=1.0A MIN MAX 10 10 140 80 7.0 0.2 0.5 1.1 50 90 100 50 15 R3 ( 20-December 2001) 300 UNITS nA nA V V V V V V Central TM CXT3019 SURFACE MOUNT NPN SILICON TRANSISTORS Semiconductor Corp. ELECTRICAL CHARACTERISTICS (Continued) SYMBOL fT Cob Cib NF TEST CONDITIONS VCE=10V, IC=50mA, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VCE=10V, IC=100µA, RS=1kΩ, f=1.0kHz MIN 100 12 60 4.0 MAX UNITS MHz pF pF dB SOT-89 CASE - MECHANICAL OUTLINE A B E F G H 1 C J L M 2 K R3 3 BOTTOM VIEW L...