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CY14B101LA

Cypress Semiconductor

1-Mbit nvSRAM

CY14B101LA CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features ■ 20 ns, 25 ns, ...


Cypress Semiconductor

CY14B101LA

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Description
CY14B101LA CY14B101NA 1-Mbit (128 K × 8/64 K × 16) nvSRAM 1-Mbit (128 K × 8/64 K × 16) nvSRAM Features ■ 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 128 K × 8 (CY14B101LA) or 64 K × 16 (CY14B101NA) ■ Hands off automatic STORE on power-down with only a small capacitor ■ STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down ■ RECALL to SRAM initiated by software or power-up ■ Infinite read, write, and RECALL cycles ■ 1 million STORE cycles to QuantumTrap ■ 20 year data retention ■ Single 3 V +20% to –10% operation ■ Industrial temperature Logic Block Diagram [1, 2, 3] ■ Packages ❐ 32-pin small-outline integrated circuit (SOIC) ❐ 44-/54-pin thin small outline package (TSOP) Type II ❐ 48-pin shrink small-outline package (SSOP) ❐ 48-ball fine-pitch ball grid array (FBGA) ■ Pb-free and restriction of hazardous substances (RoHS) compliant Functional Description The Cypress CY14B101LA...




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