CY15B102N

CY15B102N 2-Mbit (128K × 16) Automotive F-RAM Memory 2-Mbit (128K × 16) Automotive F-RAM Memory Features ■ 2-Mbit ferroelectric random access memory (F-RAM™) logically organized as 128K × 16 ❐ Configurable as 256K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page-mode operation for 30-ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 128K × 16 SRAM pinout ❐ 60-ns access time, 90-ns cycle time ■ Advanced features ❐ Software-programmable block write-protect ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface-mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ■ Low power consumption ❐ Active current 7 mA (typ) ❐ Standby current 120 A (typ) ■ Low-voltage operation: VDD = 2.0 V to 3.6 V Logic Bl...