CY7C10612GE

CY7C10612G CY7C10612GE 16-Mbit (1M × 16) Static RAM 16-Mbit (1M × 16) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Low active power ❐ ICC = 90 mA typical ■ Low CMOS standby power ❐ ISB2 = 20 mA typical ■ Operating voltages of 3.3 ± 0.3 V ■ 1.0 V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Available in Pb-free 54-pin TSOP II package Functional Description The CY7C10612G and CY7C10612GE are high performance CMOS fast static RAM devices with embedded ECC. These devices are offered in single chip enable option. The CY7C10612GE device includes an error indication pin that signals an error-detection and correction event during a read cycle. To write to the device, take Chip Enables (CE) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O0 through I/O7...