CY7C1163V18

CY7C1161V18 CY7C1176V18 CY7C1163V18 CY7C1165V18 18-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features ■ Functional Description The CY7C1161V18, CY7C1176V18, CY7C1163V18, and CY7C1165V18 are 1.8V Synchronous Pipelined SRAMs equipped with QDR™-II+ architecture. QDR-II+ architecture consists of two separate ports to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR-II+ architecture has separate data inputs and data outputs to completely eliminate the need to turn around the data bus that is required with common IO devices. Each port can be accessed through a common address bus. Addresses for read and write addresses are latched onto alternate rising edges of the input (K) clock. Accesses to the QDR-II+ read and write ports are completely independent of one another. In order to maximize data throughput, both read and write ports are equipped with Double Data Rate (DDR) interfaces. Each address location is associated with four 8-bit words (CY7C1161V18), 9-bit words (CY7C1176V18), 18-bit words (CY7C1163V18), or 36-bit words (CY7C1165V18) that burst sequentially into or out of the device. Because data can be transferred into and out of the device on every rising edge of both input clocks K and K, memory bandwidth is maximized while simplifying system design by eliminating bus turnarounds. Depth expansion is accomplished with port sele...