CY7C1645KV18

CY7C1643KV18/CY7C1645KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency) Features ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 450-MHz clock for high bandwidth ■ Four-word burst for reducing address bus frequency ■ Double data rate (DDR) interfaces on both read and write ports (data transferred at 900 MHz) at 450 MHz ■ Available in 2.0-clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high-speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Single multiplexed address input bus latches address inputs for read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self-timed writes ■ Quad data rate (QDR®) II+ operates with 2.0-cycle read latency when DOFF ...