CY7S1061GE

CY7S1061G/CY7S1061GE 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC 16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and Error Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Ultra-low power PowerSnooze™[1] device ❐ Deep Sleep (DS) current IDS = 22-µA maximum ■ Low active and standby currents ❐ ICC = 90-mA typical ❐ ISB2 = 20-mA typical ■ Wide operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ Embedded error-correcting code (ECC) for single-bit error correction ■ 1.0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages Functional Description The CY7S1061G/CY7S1061GE is a high-performance CMOS fast static RAM organized as 1,048,576 words by 16 bits. This device features fast access times (10 ns) and...