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Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery
P-TO220-2-2.
SDP04S60, SDD04S60 SDT04S60
Product Summary VRRM Qc IF
P-TO252-3-1.
600 13 4
P-TO220-3-1.
V nC A
Type SDP04S60 SDD04S60 SDT04S60
Package P-TO2.
SiC Schottky Diode
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Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • Ideal diode for Power Factor Correction up to 800W 1) • No forward recovery
P-TO220-2-2.
SDP04S60, SDD04S60 SDT04S60
Product Summary VRRM Qc IF
P-TO252-3-1.
600 13 4
P-TO220-3-1.
V nC A
Type SDP04S60 SDD04S60 SDT04S60
Package P-TO220-3-1. P-TO252-3-1. P-TO220-2-2.
Ordering Code Q67040-S4369 Q67040-S4368 Q67040-S4445
Marking D04S60 D04S60 D04S60
Pin 1 n.c.
PIN 2 C
PIN 3 A
n.c.
A
C
C
Value 4 5.6 12.5 18 40 0.78 600 600 36.5
A
Unit A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Symbol Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp=10ms
IF IFRMS
Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg
Non repetitive peak forward current
tp=10µs, TC=25°C
i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
A²s V W °C
-55... +175
Page 1
2004-02-11
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Final data
SDP04S60, SDD04S60 SDT04S60
Values min. typ. 35 max. 4.1 62 62 75 50 K/W Unit
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal re.