D1002UK

MECHANICAL DATA A B C 1 4 M 2 3 F D E G HK PIN 1 PIN 3 SOURCE SOURCE DA PIN 2 PIN 4 IJ DRAIN GATE DIM mm A 24.76 B 18.42 C 45° D 6.35 E 3.17 F 5.71 G 9.52 H 6.60 I 0.13 J 4.32 K 2.54 M 20.32 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 Inches 0.975 0.725 45° 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 TetraFET D1002UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 175MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 16 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD Power Dissipation 87W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 10A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 3/99 D1002UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Drain–Source BVDSS Breakdown Voltage VGS = 0 ID = 100mA 70 IDSS Zero Gate Voltage Drain Current VDS = 28V VGS = 0 IGSS Gate Leakage Current VGS(th) Gate Threshold Voltage* gfs Forward ...