D10040200PL1

D10040200P L1 451000MHz GaAs/GaN Pwr Dblr Hybrid D10040200PL1 45-1000MHz GaAs/GaN PWR DBLR HYBRID Package: SOT-115J www.DataSheet4U.com Product Description The D10040200PL1 is a Hybrid Power Doubler amplifier module. The part employs GaAs pHEMT and GaN HEMT die and is operated from 45MHz to 1000MHz. It provides high output capability, excellent linearity, and superior return loss performance with low noise and optimal reliability. Features      +VB Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT   INPUT OUTPUT    Low Current Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Extremely Low Noise Unconditionally Stable Under All Terminations High Output Capability 20.0dB Min. Gain at 1GHz 380mA Max. at 24VDC 45MHz to 1000MHz CATV Amplifier Systems Applications    GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Parameter Overall Power Gain Slope [1] Flatness of Frequency Response Input Return Loss Min. 18.5 20.0 1.0 20 19 18 16 20 19 18 17 Specification Typ. 19.0 20.5 1.5 Max. 19.5 21.5 2.5 0.8 Unit dB dB dB Condition VB = 24V; TMB =30°C; ZS =ZL =75  f=45MHz f=1000MHz f=45MHz to 1000MHz dB f=45MHz to 1000MHz (Peak to Valley) dB f=45MHz to 320MHz dB f=320MHz to 640MHz dB f=640MHz to 870MHz dB f=870MHz to 1000MHz Output Return Loss dB f=45MHz to 320MHz dB f=320MHz to 640MHz dB f=640MHz to 870MHz dB f=870MHz to 1000MHz Noise Figure 3.0 4.0 dB f=50MHz to 100...