TetraFET
D1012UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls) C G (typ)
2 1
A D
3
E
5
I F
4
GOLD METALLISE...
TetraFET
D1012UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B (4 pls) C G (typ)
2 1
A D
3
E
5
I F
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
N
M
H
J
K
SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN 1 GATE 2
DH
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 13.97 5.72 45° 9.78 1.65R 23.75 1.52R 30.48 19.17 0.13 2.54 1.52 5.08 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.26 0.02 0.13 0.13 0.50 Inches 0.550 0.225 45° 0.385 0.065R 0.935 0.060R 1.200 0.755 0.005 0.100 0.060 0.200 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.010 0.001 0.005 0.005 0.020 PIN 2 PIN 4
LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 11/99
Power Dissipation Drain – Source Breakdown
Voltage * Gate – Source Breakdown
Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature
290W 70V ±20V 15A –65 to 150°C 200°C
D1012UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate Leakage ...