INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD103
DESCRIPTION ·Collector-Emi...
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
2SD103
DESCRIPTION ·Collector-Emitter Breakdown
Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503
APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IE IB
B
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Collector Current-Continuous Emitter Current-Continuous Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
VALUE 80
www.DataSheet.net/
UNIT V V V A A A W ℃ ℃
50 10 3 -3 1 25 150 -65~150
PC TJ Tstg
isc Website:www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) VBE(on) ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown
Voltage Collector-Base Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector-Emitter Saturation
Voltage Base-Emitter Saturation
Voltage Base-Emitter On
Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 100mA; IB= 0 IC= 10mA; IE= 0 IE= 10mA; IC= 0 IC= 3A; IB= 0.3A
B
2SD103
MIN 50 80 10
TYP.
MAX...