D1060

Ordering number:686I PNP/NPN Epitaxial Planar Silicon Transistors 2SB824/2SD1060 50V/5A Switching Applications Applications · Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features · Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.4V max/IC=(–)3A, IB=(–)0.3A. Package Dimensions unit:mm 2010C [2SB824/2SD1060] ( ) : 2SB824 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz * : The 2SB824/2SD1060 are graded as follows by hFE at 1A : 70 Q 140 100 R 200 140 S 280 JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)60 (–)50 (–)6 (–)5 (–)9 30 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 70* 30 30 100 (160) max (–)0.1 (–)0.1 280* Unit mA mA MHz pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels ...