INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION ·High Collector ...
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode
APPLICATIONS ·TV horizontal deflection output applications. ·High
voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base
Voltage
300 V
VCEO Collector-Emitter
Voltage
150 V
VEBO Emitter-Base
Voltage
6V
IC Collector Current-Continuous
7A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃
Tj Junction Temperature
Tstg Storage Ttemperature Range
2A
1.75 W
40
150 ℃
-55~150 ℃
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1069
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining
Voltage IC= 100mA; L= 50mH
V(BR)CBO Collector-Base Breakdown
Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown
Voltage
IE= 0.1A; IC= 0
VCE(sat) Collector-Emitter Saturation
Voltage IC= 5A; IB=B 0.5A
VBE(sat) Base-Emitter Saturation
Voltage
IC= 5A; IB=B 0.5A
ICES Collector Cutoff Current
VCE= 250V; VBE= 0
hFE DC Current Gain
IC= 5A ; VCE= 1.5V
fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V
VECF
C-E Diode Forward
Voltage
IF= 6A
tf Fall Time
ICP= 5A; IB1(end)= 0.5A
MIN TYP. MAX UNI...