D1083UK

TetraFET LAB MECHANICAL DATA Dimensions in mm (inches) SEME D1083UK METAL GATE RF SILICON FET 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 4W – 28V – 200MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13dB MINIMUM SURFACE MOUNT APPLICATIONS TO–263 PACKAGE PIN 1 – GATE PIN 3 – SOURCE PIN 2 – DRAIN PIN 4 – DRAIN LOW COST DC to 200 MHz ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) TSTG TJ Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 62.5W 70V ±20V 5A –65 to 125°C 150°C Semelab plc. Telephone (01455) 556565. Fax (01455) 552612. Email [email protected] Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter Test Conditions BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V VDS = 28V PO = 4W VDS = 0V ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1A IDQ = 0.1A f = 200MHz VGS = –5V f = 1MHz f = 1MHz f = 1MHz 1 0.8 13 40 20:1 60 30 2.5 pF SEME D1083UK Min. 70 Typ. Max. Unit V 1 1 7 mA µA V S dB % — VGS(th) Gate Threshold Volta...