D1094UK

RF Silicon Mosfet 20W 500MHz 28V Single-Ended D1094UK Features: Simplified Amplifier Design Suitable for Broad Band Applications Low Crss Simple Bias Circuits Low Noise High Gain – 11dB Minimum RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 20W at 500MHz, 28V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 50W 65V +20V 6A -65 to +150°C 200°C MAX UNITS 3.5 °C/W General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT Electronics plc TT Electronics | Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK | Ph: +44 (0) 1455 556565 www.ttelectronics.com | [email protected] Classification: Public 2618 Issue 6 Page 1 of 7 RF Silicon Mosfet D1094UK Electrical Specifications Electrical Characteristics (TA = 25° C unless otherwise noted) SYMBOL PARAMETER TEST CONDITIONS BVDSS IDSS IGSS VGS(th) gfs Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate leakage Current Gate Threshold Voltage Forward Transconductance VGS = 0V, ID = 10m...