RF Silicon Mosfet
20W 500MHz 28V Single-Ended
D1094UK
Features:
• Simplified Amplifier Design • Suitable for Broad Band ...
RF Silicon
Mosfet
20W 500MHz 28V Single-Ended
D1094UK
Features:
Simplified Amplifier Design Suitable for Broad Band Applications Low Crss Simple Bias Circuits Low Noise High Gain – 11dB Minimum RoHS Compliant
Description:
Single-Ended RF Silicon
Mosfet. 20W at 500MHz, 28V
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
PD
Power Dissipation
BVDSS
Drain – Source Breakdown
Voltage
BVGSS
Gate – Source Breakdown
Voltage
ID (sat)
Drain Current
Tstg
Storage Temperature
Tj
Maximum Operating Junction Temperature
Thermal Properties
SYMBOL
PARAMETER
RθJC
Thermal Resistance, Junction to Case
50W 65V
+20V
6A -65 to +150°C
200°C
MAX
UNITS
3.5
°C/W
General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. © TT Electronics plc
TT Electronics | Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB, UK | Ph: +44 (0) 1455 556565
www.ttelectronics.com |
[email protected] Classification: Public
2618 Issue 6 Page 1 of 7
RF Silicon
Mosfet
D1094UK
Electrical Specifications
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
TEST CONDITIONS
BVDSS IDSS IGSS VGS(th) gfs
Drain-Source Breakdown
Voltage Zero Gate
Voltage Drain Current Gate leakage Current Gate Threshold
Voltage Forward Transconductance
VGS = 0V, ID = 10m...