2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO...
2SD1135
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB859
Outline
TO-220AB
1 23
1. Base 2. Collector
(Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) PC * 1 Tj Tstg
Ratings 100 80 5 4 8 40 150 –45 to +150
Unit V V V A A W °C °C
2SD1135
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to emitter breakdown V(BR)CEO
voltage
80
—
Emitter to base breakdown
voltage
V(BR)EBO
5
—
Collector cutoff current DC current transfer ratio
Base to emitter
voltage Collector to emitter saturation
voltage
I CBO hFE1*1 hFE2 VBE VCE(sat)
— 60 35 — —
— — — — —
Gain bandwidth product
fT
— 10
Collector output capacitance Cob ...
