D1170

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1170 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·High DC Current Gain: hFE= 2000( Min.) @(IC= 3A, VCE= 2V) ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 3mA) B APPLICATIONS ·Driver for solenoid,motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 120 V 120 V 6 V 6 A 10 A 1 A UNIT n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC 50 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1170 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V μA μA Collector Cutoff Current VCB= 120V; IE= 0 VEB= 6V; IC= 0 10 Emitter Cutoff Current 10 hFE DC Current Gain IC= 3A; VCE= 2V COB Output Capacitance fT Current-Gain—...