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D1186 Datasheet

Part Number D1186
Manufacturers SavantIC
Logo SavantIC
Description 2SD1186
Datasheet D1186 DatasheetD1186 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1186 DESCRIPTION www.datasheet4u.com ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector c.

  D1186   D1186






Part Number D118EI
Manufacturers MicroPower Direct
Logo MicroPower Direct
Description (D111EI Series) High Isolation SIP DC/DC Converters
Datasheet D1186 DatasheetD118EI Datasheet (PDF)

D100EI Series Low Cost, 1W High Isolation SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. New Budget Saver!! Conditions 5 VDC Input 12 VDC Input 24 VDC Input Min. 4.5 10.8 21.6 Typ. 5.0 12.0 24.0 Max. 5.5 13.2 26.4 0.3 Conditions Dual Output , Balanced Loads For Vin Change of 1% Min. Typ. ±1.0 ±0.1 ±1.2 50 120 ±0.02 Momentary (1.0 Sec.) Conditions 60.

  D1186   D1186







Part Number D1189
Manufacturers Rohm
Logo Rohm
Description 2SD1189
Datasheet D1186 DatasheetD1189 Datasheet (PDF)

Free Datasheet http://www.datasheet4u.com/ .

  D1186   D1186







Part Number D1187
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description 2SD1187
Datasheet D1186 DatasheetD1187 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO .

  D1186   D1186







2SD1186

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1186 DESCRIPTION www.datasheet4u.com ·With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 1500 800 6 5 7 50 150 -45~150 UNIT V V V A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1186 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A ICES Collector cut-off current VCE=1500V; RBE=0 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=0.3A ; VCE=5V Switching times tf Fall time ts Storage time IC=4A ;IB1=0.8A; IB2=-2A MIN TYP. MAX UNIT 6V 800 V 5.0 V 1.5 V 0.5 mA 0.1 mA 10 30 1.0 µs 1.0 µs 2 SavantIC Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u..


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