D1203UK

TetraFET D1203UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 D E 4 M 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN F G H K I J SUITABLE FOR BROAD BAND APPLICATIONS DRAIN GATE DM PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45° 6.35 3.17 Dia 5.71 12.7 Dia 6.60 0.13 4.32 3.17 26.16 Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 PIN 2 PIN 4 Inches 0.975 0.725 45° 0.25 0.125 Dia 0.225 0.500 Dia 0.260 0.005 0.170 0.125 1.03 LOW Crss USEFUL PO AT 1GHz LOW NOISE HIGH GAIN – 10 dB MINIMUM Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010 APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 117W 40V ±20V 15A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Prelim. 10/99 D1203UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capa...