Ordering number:930C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB892/2SD1207
Large-Current Switching Ap...
Ordering number:930C
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
2SB892/2SD1207
Large-Current Switching Applications
Features
· Power supplies, relay drivers, lamp drivers, and automotive wiring.
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Package Dimensions
unit:mm 2006A
[2SB892/2SD1207]
Features
· FBET and MBIT processed (Original process of SANYO). · Low saturation
voltage. · Large current capacity and wide ASO.
( ) : 2SB892
EIAJ : SC-51 SANYO : MP
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base
Voltage Collector-to-Emitter
Voltage Emitter-to-Base
Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions
B : Base C : Collector E : Emitter
Ratings (–)60 (–)50 (–)6 (–)2 (–)4 1 150 –55 to +150
Unit V V V A A W ˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1.5A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz 10 0 40 150 12 (22) MHz pF pF Conditions Ratings min typ max (–)0.1 (–)0.1 56 0 Unit µA µA
* : The 2SB892/2SD1207 are graded as follows by hFE at 100mA :
100 R 200 140 S 280 200 T 400 280 U 560
Any and all SANYO products described or contained herein do not have specifications that can handle applications that...
