TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application...
TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process)
2SD1221
2SD1221
Audio Frequency Power Amplifier Application
Unit: mm
Low collector saturation
voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
High power dissipation: PC = 20 W (Tc = 25°C) Complementary to 2SB906
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base
voltage
VCBO 60 V
Collector-emitter
voltage
VCEO 60 V
Emitter-base
voltage
VEBO 7 V
Collector current
IC 3 A
Base current
IB 0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.0 W
20
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-7J1A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-05-19
Electrical Characteristics (Ta = 25°C)
2SD1221
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown
voltage
DC ...