D1235

Ordering number:1046B PNP/NPN Epitaxial Planar Silicon Transistors 2SB919/2SD1235 30V/8A High-Speed Switching Applications Applications · Large current switching of relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. · Large current capacity. Package Dimensions unit:mm 2010C [2SB919/2SD1235] ( ) : 2SB919 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A * : The 2SB919/2SD1235 are classified as follows according to hFE at 1A. 70 Q 140 100 R 200 140 S 280 JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)60 (–)30 (–)6 (–)8 (–)15 1.75 30 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 120 max (–)0.1 (–)0.1 280* Unit mA mA MHz Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-s...