European PowerSemiconductor and Electronics Company
Marketing Information D 1251 S 45 T
∅ 75 C
14+-0.5
∅ 77 max.
A
∅...
European PowerSemiconductor and Electronics Company
Marketing Information D 1251 S 45 T
∅ 75 C
14+-0.5
∅ 77 max.
A
∅ 48-0.1
2 center holes ∅ 3.5 ×1.8
VWK January
Schnelle Gleichrichterdiode Fast Diode
D 1251 S 45 T
Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung repetitive peak reverse
voltage Stoßspitzensperrspannung non-repetitive peak reverse
voltage Durchlaßstrom-Grenzeffektivwert / RMS forward current Dauergrenzstrom / mean forward current
Stoßstrom-Grenzwert1) surge forward current1) Grenzlastintegral I²t-value
Charakteristische Werte / Characteristic values
Gleichsperrspannung / contin. direct reverse
voltage Durchlaßspannung / forward
voltage Schleusenspannung / threshold
voltage Ersatzwiderstand / forward slope resistance Sperrstrom / reverse current
Rückstromspitze / peak reverse recovery current
Sperrverzögerungsladung recovered charge
Period. Abklingsteilheit des Durchlaßstromes beim Ausschalten / repetitive decay rate of on-state current at turn-off
tvj = -40°C...140°C
tvj = +25°C...140°C
tC = 85°C tC = 70°C tvj = 25°C tvj = 140°C tvj = 25°C tvj = 140°C
tC = -40°C...+85°C tvj = 140°C iFM = 2500 A tvj = 140°c tvj = 140°C tvj = 140°C, vR = 0,67 VRRM tvj = 140°C, vR = VRRM iFM = 1000 A, -dFi /dt = 250 A/µs tvj = 140 °C; vR(Spr) = 1000 V; C = 3 µF; R = 4Ω iFM = 1000 A, -dFi /dt = 250 A/µs tvj = 140 °C; vR(Spr) = 1000 V; C = 3 µF; R = 4Ω iFM = 2000 A, CS = 3 µF; R = 4 Ω tvj = 140 ...