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D1251S45T

eupec

Fast Diode

European PowerSemiconductor and Electronics Company Marketing Information D 1251 S 45 T ∅ 75 C 14+-0.5 ∅ 77 max. A ∅...


eupec

D1251S45T

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European PowerSemiconductor and Electronics Company Marketing Information D 1251 S 45 T ∅ 75 C 14+-0.5 ∅ 77 max. A ∅ 48-0.1 2 center holes ∅ 3.5 ×1.8 VWK January Schnelle Gleichrichterdiode Fast Diode D 1251 S 45 T Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage Stoßspitzensperrspannung non-repetitive peak reverse voltage Durchlaßstrom-Grenzeffektivwert / RMS forward current Dauergrenzstrom / mean forward current Stoßstrom-Grenzwert1) surge forward current1) Grenzlastintegral I²t-value Charakteristische Werte / Characteristic values Gleichsperrspannung / contin. direct reverse voltage Durchlaßspannung / forward voltage Schleusenspannung / threshold voltage Ersatzwiderstand / forward slope resistance Sperrstrom / reverse current Rückstromspitze / peak reverse recovery current Sperrverzögerungsladung recovered charge Period. Abklingsteilheit des Durchlaßstromes beim Ausschalten / repetitive decay rate of on-state current at turn-off tvj = -40°C...140°C tvj = +25°C...140°C tC = 85°C tC = 70°C tvj = 25°C tvj = 140°C tvj = 25°C tvj = 140°C tC = -40°C...+85°C tvj = 140°C iFM = 2500 A tvj = 140°c tvj = 140°C tvj = 140°C, vR = 0,67 VRRM tvj = 140°C, vR = VRRM iFM = 1000 A, -dFi /dt = 250 A/µs tvj = 140 °C; vR(Spr) = 1000 V; C = 3 µF; R = 4Ω iFM = 1000 A, -dFi /dt = 250 A/µs tvj = 140 °C; vR(Spr) = 1000 V; C = 3 µF; R = 4Ω iFM = 2000 A, CS = 3 µF; R = 4 Ω tvj = 140 ...




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