D1266

Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A s Features q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation voltage VCE(sat) q Full-pack package which can be installed to the heat sink with one screw s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to 2SD1266 60 VCBO V base voltage 2SD1266A 80 Collector to 2SD1266 60 VCEO V emitter voltage 2SD1266A 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power TC=25°C dissipation Ta=25°C PC 35 W 2 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 s Electrical Characteristics (TC=25˚C) ˚C ˚C www.DataSheet.co.kr Parameter Symbol Conditions Collector cutoff 2SD1266 current 2SD1266A Collector cutoff 2SD1266 current 2SD1266A Emitter cutoff current Collector to emitter 2SD1266 voltage 2SD1266A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICES ICEO IEBO VCEO hFE1* hFE2 VBE VCE(sat) fT ton tstg tf VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 30V, IB = 0 VCE = 60V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A VCE = 4V, IC = 3A IC = 3A, IB = 0.375A VCE = 10V, IC = 0.5A, f = 10MHz IC = 1A, IB1 = 0.1A, ...