Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward ...
Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio Complementary to 2SB1299
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 100 60 80 6 6 3 1 40 2 150 –55 to +150 Unit V
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
14.0±0.5
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1273 2SD1273A 2SD1273 Symbol VCBO VCEO VEBO ICP IC IB Ta=25°C PC Tj Tstg
1.4±0.1
1.3±0.2
Solder Dip
0.8±0.1
0.5 +0.2 –0.1
2.54±0.25 5.08±0.5
emitter
voltage 2SD1273A Emitter to base
voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Junction temperature Storage temperature
V V A A A W ˚C ˚C
1
2
3
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
s Electrical Characteristics
Parameter Collector cutoff current 2SD1273 2SD1273A
(TC=25˚C)
Symbol ICBO ICEO IEBO Conditions VCB = 80V, IE = 0 VCB = 100V, IE = 0 VCE = 40V, IB = 0 VCB = 6V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 0.5A IC = 2A, IB = 0.05A VCE = 12V, IC = 0.2A, f = 10MHz 50 60 80 500 2500 1 V MHz min typ max 100 100 100 100 Unit µA µA µA V
Collector cutoff current Emitter cutoff current Collector to emitter
voltage 2SD1273 2SD1273A
VCEO hFE* VCE(sat) fT
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