D1403

2SD1403 GENERAL DESCRIPTION Silicon Diffused Power Transistor Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA SYMBOL MT-100 CONDITIONS VBE = 0V TYP VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC =4.0A; IB = 1.0A f = 16KHz IF = 5.0A ICsat = 5.0A; f = 16KHz 1.6 0.4 MAX 1500 600 6 12 120 5.0 2.0 - UNIT V V A A W V A V s LIMITING VALUES PARAMETER Collector-emitter voltage peak value VCESM Collector-emitter voltage (open base) VCEO Collector current (DC) IC Collector current peak value ICM Base current (DC) IB Base current peak value IBM Total power dissipation Ptot www.DataSheet4U.com Storage temperature Tstg Junction temperature Tj SYMBOL CONDITIONS VBE = 0V MIN -55 MAX 1500 600 6 12 120 150 150 UNIT V V A A A A W Tmb 25 ELECTRICAL CHARACTERISTICS SYMBOL ICE ICES VCEOsust VCEsat VBEsat hFE VF fT Cc ts tf PARAMETER Collector cut-off current Collector-emitter sustaining voltage Collector-emitter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency at f = 5MHz Collector capacitance at f = 1MHz...