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D1404 Datasheet

Part Number D1404
Manufacturers INCHANGE
Logo INCHANGE
Description Silicon NPN Power Transistor
Datasheet D1404 DatasheetD1404 Datasheet (PDF)

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak 300 V 15.

  D1404   D1404






Part Number D1409
Manufacturers SavantIC
Logo SavantIC
Description 2SD1409
Datasheet D1404 DatasheetD1409 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1409 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN DE 1 2 3 Base Collector Emitter SCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL P VCBO VCEO VEBO IC IB ARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current TC=25 PC Collector po.

  D1404   D1404







Part Number D1408
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description 2SD1408
Datasheet D1404 DatasheetD1408 Datasheet (PDF)

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

  D1404   D1404







Part Number D1407
Manufacturers Wing Shing Electronic
Logo Wing Shing Electronic
Description 2SD1407
Datasheet D1404 DatasheetD1407 Datasheet (PDF)

www.DataSheet4U.com 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 ! Complement to 2SB1016 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -100 -100 -5 -3 25 150 -50~150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TA=25℃) Characteristic C.

  D1404   D1404







Part Number D1406
Manufacturers SavantIC
Logo SavantIC
Description 2SD1406
Datasheet D1404 DatasheetD1406 Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1406 · www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SB1015 APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Fig.1 simplified outline (TO-220Fa) and symbol Emitter Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base.

  D1404   D1404







Part Number D1405
Manufacturers Toshiba
Logo Toshiba
Description 2SD1405
Datasheet D1404 DatasheetD1405 Datasheet (PDF)

Free Datasheet http://www.datasheet-pdf.com/ Free Datasheet http://www.datasheet-pdf.com/ .

  D1404   D1404







Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·B/W TV horizontal deflection output applications. ·High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak 300 V 150 V 6V 7A 15 A IB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 2A 2 W 25 150 ℃ -55~150 ℃ isc Product Specification 2SD1404 isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1404 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.5V fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ICP= 5A; IB1(end)= 0.5A MIN TYP. MAX UNIT.


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