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INCHANGE
INCHANGE
D1410 Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1410 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 250V(Min) ·Collector-Emitter Saturation Voltage:V CE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 2000
D1410 pdf
Toshiba Semiconductor
Toshiba Semiconductor
D1410A 2SD1410A
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D1410A pdf




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