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D1411A Datasheet

Part Number D1411A
Manufacturers Toshiba
Logo Toshiba
Description 2SD1411A
Datasheet D1411A DatasheetD1411A Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta.

  D1411A   D1411A






Part Number D1411
Manufacturers SavantIC
Logo SavantIC
Description 2SD1411
Datasheet D1411A DatasheetD1411 Datasheet (PDF)

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1411 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20Fa package ·Low saturation voltage ·Complementary to 2SB1018 APPLICATIONS ·Power amplifier applications ·High current switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector -emitter voltage VEBO Emitter-base voltage IC Collector current IB Base .

  D1411A   D1411A







2SD1411A

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications 2SD1411A Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 30 JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 1.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SD1411A Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-.


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