Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0±0....
Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0±0.3 11.0±0.2
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Unit: mm
5.0±0.2 3.2
s Features
q q q
16.2±0.5 12.5 3.5 Solder Dip
High foward current transfer ratio hFE High collector to base
voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.5 1 2 3
emitter
voltage 2SD1457A Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W
B
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
Internal Connection
C
˚C ˚C
E
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter
voltage Emitter to base
voltage Forward current transfer ratio Collector to emitter saturation
voltage Base to emitter saturation
voltage Transition frequency
(TC=25˚C)
Symbol ICBO VCEO(sus) VEBO hFE* VCE(sat) VBE(sat) fT Conditions VCB = 200V, IE = 0 IC = 2A, L = 10mH IE = 0.1A, IC = 0 VCE = 2V, IC = 2A IC = 3A, IB = 0.06A IC = 3A, IB = 0.06A VCE = 10V, IC = 0.5A, f = 1MHz 15 150 5 700 10000 1.5 2.5 V V MHz min typ max 100 Unit µA V V
*h
FE
Rank classification
Q P O
Rank ...