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D1559 Datasheet

Part Number D1559
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description Silicon NPN Triple Diffused Transistor
Datasheet D1559 DatasheetD1559 Datasheet (PDF)

2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 1 3 kΩ (Typ) 400 Ω (Typ) 3 2SD1559 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VC.

  D1559   D1559






Part Number D1557
Manufacturers ETC
Logo ETC
Description 2SD1557
Datasheet D1559 DatasheetD1557 Datasheet (PDF)

Free Datasheet http://www.datasheet4u.com/ .

  D1559   D1559







Part Number D1557
Manufacturers ETC
Logo ETC
Description NPN Transistor
Datasheet D1559 DatasheetD1557 Datasheet (PDF)

R µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð¾§Ìå D1557 ²úÆ·ÌØÐÔ ¡ô ¡ô www.DataSheet4U.com ¸ßÄÍѹ ±¥ºÍѹ½µ ¡ô ¡ô ¡ô ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ :VCBO=1700V :VCE(sat)=1V(max.) :tf=0.8¦Ì S(max.) RoHS£©²úÆ· Ö÷ÒªÓÃ; ¡ô ²ÊÉ«µçÓ»úÐä³ö· ÒýÏ߶ËÐòºÅ¼°µÈ§ç· ¸ÅÊö 3DD1557 ÊÇ ÖвÉÓõÄ÷Òª¹¤Õ¼Êõ£º¸ßÑ̨桢ÈýØ À©É¢¼ÊõµÈ ,²ÉÓÃËÜÁÏÈ«°ü·â½á¹¡£ RBE=50¦¸ (µäÐÍÖµ ) NPN Ë«¼Ð͸߷´Ñ¹ó¦Âʾ§ÌåÜ£¬ÖÆÔì ¾ø¶Ô×î´ó ¨Öµ Ïî ¼¯µç«¡ª»ùÖ±Á÷ѹ ¼¯µç«¡ª·¢ÉäÖ±Á÷ѹ ·¢É伫¡ª»ùÖ±Á÷µçѹ ×î´ó¼¯µç«Ö±Á÷ ×î´ó¼¯µç«Âö³åÁ÷ ×î´ó»ù¼«Ö±Á÷µç ×î´ó¼¯µç«ºÄÉ¢¹¦ÂÊ ×î¸ß½áÎ.

  D1559   D1559







Part Number D1556
Manufacturers Wing Shing Electronic
Logo Wing Shing Electronic
Description NPN Triple Diffused Planar Silicon Transistor
Datasheet D1559 DatasheetD1556 Datasheet (PDF)

2SD1556 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) www.DataSheet4U.com ! ! High Collector-Base Voltage(VCBO=1500V) High Speed Switching 2-16E3A ABSOLUTE MAXIMUM RATINGS (TA=25℃) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 1500 1500 6 6 50 150 -50.

  D1559   D1559







Part Number D1555
Manufacturers JILIN SINO
Logo JILIN SINO
Description CASE-RATED BIPOLAR TRANSISTOR
Datasheet D1559 DatasheetD1555 Datasheet (PDF)

CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1555 FOR LOW FREQUENCY R 3DD1555 MAIN CHARACTERISTICS BVCBO IC VCE(sat) tf 1500 V 5A 5 V(max) 1 s(max) Package TO-3P(H)IS APPLICATIONS z z Horizontal deflection output for color TV. z3DD1555 NPN FEATURES z 3DD1555 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process, , triple diffused process etc., adoption of fully plastic packge. RoHS RoHS product. ORDER MESSAGE 123 .

  D1559   D1559







Silicon NPN Triple Diffused Transistor

2SD1559 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1079 Outline TO-3P 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2 1 3 kΩ (Typ) 400 Ω (Typ) 3 2SD1559 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC * 1 Tj Tstg Ratings 100 100 7 20 30 3 100 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Collector to base breakdown voltage V(BR)CBO 100 Collector to emitter breakdown V(BR)CEO voltage 100 Collector to emitter sustain voltage VCEO(sus) 100 Emitter to base breakdown voltage V(BR)EBO 7 Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage I CBO I CEO h.


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