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D1651
NPN Transistor
Description
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown
Voltage
- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ...
INCHANGE
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