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DATA SHEET
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTI...
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DATA SHEET
SILICON POWER TRANSISTOR
2SD1695
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER
AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD1695 is a Darlington connection transistor and
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PACKAGE DRAWING (UNIT: mm)
incorporates a dumper diode between the collector and emitter and a constant
voltage diode and protection elements between the collector and base. This transistor is ideal for drives in solenoid and actuators.
FEATURES
On-chip protection elements enable time and cost reduction. C to E: Dumper diode C to B: Constant diode Low collector saturation
voltage
QUALITY GRADES
Standard
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Electrode Connection 1. Emitter 2. Collector 3. Base 4. Collector (fin)
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25°C) PT (Tc = 25°C) Tj Tstg Ratings 31 ±4 31 ±4 8.0 ±2.0 ±3.0 0.2 1.3 10 150 −55 to +150 Unit V V V A A A W W °C °C
* PW ≤ 10 ms, duty cycle ≤ 50%
The information in this docum...